DMN2020LSN new product n-channel enhancement mode mosfet features ? low on-resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? esd protected up to 2kv ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sc-59 ? case material - molded plasti c, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish matte ti n annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.014 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 20 v gate-source voltage continuous v gss 12 v continuous drain current steady state t a = 25c t a = 85c i d 6.9 4.5 a pulsed drain current (note 4) i dm 30 a thermal characteristics characteristic symbol value units power dissipation (note 3) p d 0.61 w thermal resistance, junction to ambient @t a = 25c (note 3) r ja 204 c /w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. no purposefully added lead. 2. device mounted on fr-4 pcb, with minimum recommended pad layout. 3. repetitive rating, pulse width limited by junction temperature. sc-59 top view pin out confi g uration top view equivalent circuit source gate protection diode gate drain d g s esd protected to 2kv product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
DMN2020LSN new product electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss 20 - - v v gs = 0v, i d = 250 a zero gate voltage drain current t j = 25c i dss - - 1.0 p a v ds = 20v, v gs = 0v gate-source leakage i gss - - 10 p a v gs = 12v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs ( th ) 0.5 1.0 1.5 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) - 13 18 20 28 m v gs = 4.5v, i d = 9.4a v gs = 2.5v, i d = 8.3a forward transfer admittance |y fs | - 16 - s v ds = 5v, i d = 9.4a diode forward voltage v sd - 0.7 1.2 v v gs = 0v, i s = 1.3a dynamic characteristics (note 6) input capacitance c iss - 1149 - pf v ds = 10v, v gs = 0v, f = 1.0mhz output capacitance c oss - 157 - pf reverse transfer capacitance c rss - 142 - pf gate resistance r g - 1.51 - v ds = 0v, v gs = 0v, f = 1mhz total gate charge q g - 11.6 - nc v gs = 4.5v, v ds = 10v, i d = 9.4a gate-source charge q g s - 2.7 - nc gate-drain charge q g d - 3.4 - nc turn-on delay time t d ( on ) - 11.67 - ns v dd = 10v, v gs = 4.5v, r gen = 6 ? , i d = 1a turn-on rise time t r - 12.49 - ns turn-off delay time t d ( off ) - 35.89 - ns turn-off fall time t f - 12.33 - ns notes: 4. short duration pulse test used to minimize self-heating effect. 5. guaranteed by design. not subject to production testing. product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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